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參數(shù)資料
| 型號： | 2SK1161-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 97K |
| 代理商： | 2SK1161-E |
2SK1161, 2SK1162
Rev.2.00 Sep 07, 2005 page 5 of 6
20
0.8
2.0
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A)
16
0.4
1.2
1.6
8
12
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0
4
5, 10 V
VGS = 0, –10 V
3
Pulse Width PW (S)
Normalized
Transient
Thermal
Impedance
γ S
(t)
1.0
0.1
0.3
D = 1
10
0.03
0.01
100
10 m
100 m
1
10
1 m
TC = 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Sh
ot Pul
se
T
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 1.25°C/W, T
C = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
Vin Monitor
Vout Monitor
RL
50
Vin = 10 V
D.U.T
.
VDD = 30 V
.
Switching Time Test Circuit
Vin
10 %
90 %
10 %
td (on)
td (off)
tr
tf
Vout
10 %
Waveforms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1162 | 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1161 | 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1163 | 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1164-E | 11 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1163-E | 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1162 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 500V 10A 3PIN TO-3P - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1162-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-3P |
| 2SK1163 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 450V 11A 3PIN TO-3P - Rail/Tube |
| 2SK1164 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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