參數(shù)資料
型號: 2SK1153
元件分類: JFETs
英文描述: 3 A, 450 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 7/11頁
文件大?。?/td> 63K
代理商: 2SK1153
2SK1153, 2SK1154
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1153 V
(BR)DSS
450
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1154
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1153 I
DSS
250
AV
DS = 360 V, VGS = 0
drain current
2SK1154
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1153 R
DS(on)
2.0
2.8
I
D = 2 A, VGS = 10 V *
1
on stateresistance
2SK1154
2.2
3.0
Forward transfer admittance
|yfs|
1.5
2.5
S
I
D = 2 A, VDS = 10 V *
1
Input capacitance
Ciss
330
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
90
pF
f = 1 MHz
Reverse transfer capacitance
Crss
15
pF
Turn-on delay time
t
d(on)
—7
—ns
I
D = 2 A, VGS = 10 V,
Rise time
t
r
20
ns
R
L = 15
Turn-off delay time
t
d(off)
—30
ns
Fall time
t
f
—20
ns
Body to drain diode forward
voltage
V
DF
0.9
V
I
F = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
300
ns
I
F = 3 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
相關(guān)PDF資料
PDF描述
2SK1156 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1155 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1155 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1165 12 A, 450 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1168 15 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1153(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1153-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1154 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK1154-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET