參數(shù)資料
型號(hào): 2SK1151L
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 2/8頁
文件大?。?/td> 57K
代理商: 2SK1151L
2SK1151(L)(S), 2SK1152(L)(S)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1151
V
DSS
450
V
2SK1152
500
Gate to source voltage
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
±
30
1.5
V
Drain current
A
Drain peak current
1
6
A
Body to drain diode reverse drain current
1.5
A
Channel dissipation
2
20
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note
1. PW
10
μ
s, duty cycle
1%
2. Value at T
C
= 25
°
C
Tstg
–55 to +150
相關(guān)PDF資料
PDF描述
2SK1151S Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1152 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1152L Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1152S Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1153 Silicon N-Channel MOS FET(N溝道MOSFET)
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參數(shù)描述
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