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參數(shù)資料
| 型號： | 2SK1133 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIMOLD, SC-59, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 451K |
| 代理商： | 2SK1133 |
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MOS FIELD EFFECT TRANSISTOR
2SK1133
SWITCHING
N-CHANNEL MOSFET
DATA SHEET
Document No. D17568EJ4V0DS00 (4th edition)
Date Published December 2005 NS CP(K)
Printed in Japan
1991
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK1133, N-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
The 2SK1133 has excellent switching characteristics and is
suitable for use as a high-speed switching device in digital
circuits.
FEATURES
Directly driven by ICs having a 5 V power source.
Not necessary to consider driving current because of its high
input impedance.
Possible to reduce the number of parts by omitting the bias
resistor.
Can be used complementary with the 2SJ166.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1133
SC-59 (Mini Mold)
Marking: G11
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
50
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±7.0
V
Drain Current (DC)
ID(DC)
±100
mA
Drain Current (pulse)
Note
ID(pulse)
±200
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
2.9
±0.2
0.4
+0.1
–0.05
0.3
1.1
to
1.4
Marking
0.16
+0.1
–0.06
0
to
0.1
1. Source
2. Gate
3. Drain
1
2
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1151(S) | 5.5 ohm, POWER, FET |
| 2SK1152(L) | 6 ohm, POWER, FET |
| 2SK1151(L) | 5.5 ohm, POWER, FET |
| 2SK1151(L) | 5.5 ohm, POWER, FET |
| 2SK1152(L) | 6 ohm, POWER, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1133-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1133-T1B | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SK1133-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R |
| 2SK1134 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK1135 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-247VAR |
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