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參數(shù)資料
| 型號(hào)： | 2SK1103O |
| 英文描述： | TRANSISTOR | JFET | N-CHANNEL | 200UA I(DSS) | TO-236 |
| 中文描述： | 晶體管|場(chǎng)效應(yīng)| N溝道| 200UA我（直）|至236 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大小： | 47K |
| 代理商： | 2SK1103O |
2SK1167, 2SK1168
6
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
5,000
2,000
500
200
100
50
1,000
0.2
0.5
1.0
2
5
10
20
Typical Capacitance
vs. Drain to Source Voltage
100
010
20
30
40
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Coss
Ciss
Crss
10
VGS = 0
f = 1 MHz
1,000
10,000
Dynamic Input Characteristics
500
400
300
200
100
0
20
40
60
80
100
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
VDD = 100 V
VDD = 400 V
250 V
VDS
ID = 15 A
400 V
VGS
100 V
Switching Characteristics
1,000
200
100
50
20
10
500
Switching
Time
t
(ns)
0.5
1.0
2
5
10
20
50
Drain Current ID (A)
VGS = 10 V, VDD 30 V
PW = 2
s, duty < 1%
td (off)
tr
tf
td (on)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1103P | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1103Q | TRANSISTOR | JFET | N-CHANNEL | 1MA I(DSS) | TO-236 |
| 2SK1103R | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1104O | TRANSISTOR | JFET | N-CHANNEL | 200UA I(DSS) | TO-251VAR |
| 2SK1104P | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1103P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 600UA I(DSS) | TO-236 |
| 2SK1103Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 1MA I(DSS) | TO-236 |
| 2SK1103R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.5MA I(DSS) | TO-236 |
| 2SK1104 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1104O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 200UA I(DSS) | TO-251VAR |
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