參數(shù)資料
型號: 2SK1094
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 2/4頁
文件大?。?/td> 28K
代理商: 2SK1094
2SK1094
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
60
V
Gate to source voltage
±
20
15
V
Drain current
A
Drain peak current
1
60
A
Body to drain diode reverse drain current
15
A
Channel dissipation
2
25
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes 1. PW
10
μ
s, duty cycle
1%
2. Value at T
C
= 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol Min
V
(BR)DSS
Typ
Max
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
60
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
I
GSS
1.0
0.055
±
10
250
2.0
0.065
μ
A
μ
A
V
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V *
V
GS(off)
R
DS(on)
1
0.075
12
860
0.095
S
pF
I
D
= 8 A, V
GS
= 4 V *
I
D
= 8 A, V
DS
= 10 V *
V
= 10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
Input capacitance
|yfs|
Ciss
7
1
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
t
d(on)
450
140
10
pF
pF
ns
I
D
= 8 A, V
GS
= 10 V,
R
L
= 3.75
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
r
t
d(off)
t
f
V
DF
70
180
120
1.3
ns
ns
ns
V
I
F
= 15 A, V
GS
= 0
t
rr
135
ns
I
F
= 15 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
See characteristic curves of 2SK971.
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