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參數(shù)資料
| 型號(hào)： | 2SK1070 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Junction FET |
| 中文描述： | 硅N溝道結(jié)場效應(yīng)管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SK1070 |
2SK1070
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
V
GSO
I
D
I
G
Pch
–22
V
Gate to source voltage
–22
V
Drain current
50
mA
Gate current
10
mA
Channel power dissipation
150
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate cutoff current
I
GSS
V
(BR)GSS
—
—
–10
nA
V
GS
= –15 V, V
DS
= 0
I
G
= –10
μ
A, V
DS
= 0
Gate to source breakdown
voltage
–22
—
—
V
Drain current
I
DSS
*
1
V
GS(off)
6
—
40
mA
V
DS
= 5 V, V
GS
= 0, Pulse test
V
DS
= 5 V, I
D
= 10
μ
A
V
DS
= 5 V, V
GS
= 0, f = 1 kHz
V
DS
= 5 V, V
GS
= 0, f = 1 MHz
Gate to source cutoff voltage
0
—
–2.5
V
Forward transfer admittance
fs
y
20
30
—
mS
Input capacitance
Note:
1. The 2SK1070 is grouped by I
DSS
as follows.
Grade
B
Ciss
—
9
—
pF
C
D
E
Mark
PIB
PIC
PID
PIE
I
DSS
6 to 14
12 to 22
18 to 30
27 to 40
See characteristic curves of 2SK435.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1070_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Junction FET |
| 2SK1070B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SOT-346 |
| 2SK1070C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 12MA I(DSS) | SOT-346 |
| 2SK1070D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 18MA I(DSS) | SOT-346 |
| 2SK1070E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 27MA I(DSS) | SOT-346 |
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