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參數(shù)資料
| 型號(hào)： | 2SK0301(2SK301) |
| 廠商： | Panasonic Corporation |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 2SK0301（2SK301） - N溝道結(jié)場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 74K |
| 代理商： | 2SK0301(2SK301) |
247
Silicon Junction FETs (Small Signal)
2SK0301
(2SK301)
Silicon N-Channel Junction FET
unit: mm
For low-frequency amplification
For switching
I
Features
G
Low noies, high gain
G
High gate to drain voltage V
GDO
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
j
T
stg
Ratings
55
55
55
±30
10
250
125
55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS*
I
GSS
V
GDC
V
GSC
g
m
C
iss
C
rss
NF
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
30V, V
DS
= 0
I
G
=
100
μ
A, V
DS
= 0
V
DS
= 10V, I
D
= 10
μ
A
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100k
f = 100Hz
min
1
55
2.5
max
20
10
5
Unit
mA
nA
V
V
mS
pF
pF
dB
*
I
DSS
rank classification
typ
80
7.5
6.5
1.9
0.5
Runk
I
DSS
(mA)
P
1 to 3
Q
2 to 6.5
R
5 to 12
1: Drain
2: Gate
3: Source
JEDEC: TO-92
EIAJ: SC-43
TO-92 Type Package
5.0±0.2
4.0±0.2
5
1
0.45
+0.2
–
0.1
0.45
+0.2
–
0.1
1.27
1.27
2
2.54±0.15
2
1
3
S
10 to 20
Note) The part number in the parenthesis shows conventional part number.
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