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參數(shù)資料
| 型號： | 2SJ79 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2SJ79 |
2SJ76, 2SJ77, 2SJ78, 2SJ79
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SJ76
V
DSX
–140
V
2SJ77
–160
2SJ78
–180
2SJ79
–200
Gate to source voltage
V
GSS
I
D
I
DR
Pch
±
15
V
Drain current
–500
mA
Body to drain diode reverse drain current
–500
mA
Channel dissipation
1.75
W
Pch*
1
30
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note
1. Value at T
C
= 25
°
C
Tstg
–45 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SJ76
V
(BR)DSX
–140
—
—
V
V
GS
= 2 V, I
D
= –1 mA
breakdown voltage
2SJ77
–160
—
—
V
2SJ78
–180
—
—
V
2SJ79
–200
—
—
V
Gate to source breakdown
voltage
V
(BR)GSS
±
15
—
—
V
I
G
=
±
10
μ
A, V
DS
= 0
Gate to source voltage
V
GS(on)
V
DS(sat)
–0.2
—
–1.5
V
I
D
= –10 mA, V
DS
= –10 V*
1
I
D
= –10 mA, V
GD
= 0 *
1
Drain to source saturation
voltage
—
—
–2.0
V
Forward transfer admittance
|y
fs
|
Ciss
20
35
—
mS
I
D
= –10 mA, V
DS
= –20 V*
1
V
DS
= –10 V, I
D
= –10 mA,
f = 1 MHz
Input capacitance
—
120
—
pF
Reverse transfer capacitance
Note
1. Pulse test
Crss
—
4.8
—
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ79(E) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SJ79-E | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 200V 0.5A 3PIN TO-220AB - Rail/Tube |
| 2SJ79K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 500MA I(D) | TO-220 |
| 2SK0065 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Impedance Conversion In Low Frequency |
| 2SK0065(2SK65) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號FET － 接合形FET |
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