參數(shù)資料
型號: 2SJ646
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 小信號晶體管
英文描述: 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: TP, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 35K
代理商: 2SJ646
2SJ646
No.8282-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
11
ns
Rise Time
tr
See specified Test Circuit.
40
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
40
ns
Fall Time
tf
See specified Test Circuit.
30
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--8A
11
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--8A
2.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--8A
1.7
nC
Diode Forward Voltage
VSD
IS=--8A, VGS=0V
--1.0
--1.2
V
Package Dimensions
unit : mm
7518-004
7003-004
Switching Time Test Circuit
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6
0.5
2.3
7.0
7.5
1.6
0.8
5.5
1.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
PW=10
s
D.C.
≤1%
0V
--10V
VIN
P.G
50
G
S
ID= --4A
RL=3.75
VDD= --15V
VOUT
2SJ646
VIN
D
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
2.3
7.0
2.5
5.5
1.5
0.8
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
相關PDF資料
PDF描述
2SJ646-TL 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ646 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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