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參數(shù)資料
| 型號(hào)： | 2SJ636-TL |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TP-FA, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 36K |
| 代理商： | 2SJ636-TL |
2SJ636
No.7496-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--3
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--12
A
Allowable Power Dissipation
PD
1W
Tc=25
°C15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--100V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--1.5A
1.5
3
S
RDS(on)1
ID=--1.5A, VGS=--10V
415
535
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--1.5A, VGS=--4V
535
735
m
Input Capacitance
Ciss
VDS=--20V, f=1MHz
535
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
43
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
31
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
9
ns
Rise Time
tr
See specified Test Circuit.
15
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
56
ns
Fall Time
tf
See specified Test Circuit.
35
ns
Total Gate Charge
Qg
VDS=--50V, VGS=--10V, ID=--3A
11
nC
Gate-to-Source Charge
Qgs
VDS=--50V, VGS=--10V, ID=--3A
2.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--50V, VGS=--10V, ID=--3A
2
nC
Diode Forward Voltage
VSD
IS=--3A, VGS=0
--0.9
--1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
0V
--10V
VIN
P.G
50
G
S
ID= --1.5A
RL=33.3
VDD= --50V
VOUT
2SJ636
VIN
D
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