參數(shù)資料
型號： 2SJ626
廠商： NEC Corp.
英文描述： Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V
中文描述： MOS場效應管
文件頁數(shù)： 3/8頁
文件大?。?/td> 65K
代理商： 2SJ626
Data Sheet D15962EJ1V0DS
3
2SJ626
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
T
0
0.25
0.5
0.75
1
1.25
1.5
0
25
50
75
100
125
150
175
Mounted on FR-4 board
t
≤
5 sec.
T
A
- Ambient Temperature -
°
C
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
-0.01
-0.1
-1
-10
-0.1
-1
-10
-100
100 ms
10 ms
I
D(pulse
)
I
D(DC)
PW = 1 ms
R
DS(on)
Limited
(V
GS
=
10 V)
5 s
Single Pulse
Mounted on FR-4 board of
50 cm
2
x 1.1 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
1
10
100
1000
Single Pulse
Without board
Mounted on FR-4 board of
50 cm
2
x 1.1 mm
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
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相關代理商/技術參數(shù)
參數(shù)描述
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