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參數資料
| 型號： | 2SJ625-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-96, 3 PIN |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 2SJ625-A |
Data Sheet D15961EJ1V0DS
2
2SJ625
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –20 V, VGS = 0 V
–10
A
Gate Leakage Current
IGSS
VGS =
m8.0 V, VDS = 0 V
m10
A
Gate Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1.0 mA
–0.45
–0.75
–1.5
V
Forward Transfer Admittance
| yfs |VDS = –10 V, ID = –1.5 A
2.0
4.9
S
Drain to Source On-state Resistance
RDS(on)1
VGS = –4.5 V, ID = –1.5 A
90
113
m
RDS(on)2
VGS = –2.5 V, ID = –1.5 A
128
171
m
RDS(on)3
VGS = –1.8 V, ID = –1.0 A
188
314
m
Input Capacitance
Ciss
VDS = –10 V
348
pF
Output Capacitance
Coss
VGS = 0 V
88
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
38
pF
Turn-on Delay Time
td(on)
VDD = –10 V, ID = –1.5 A
39
ns
Rise Time
tr
VGS = –4.0 V
190
ns
Turn-off Delay Time
td(off)
RG = 10
220
ns
Fall Time
tf
250
ns
Total Gate Charge
QG
VDD = –16 V
2.6
nC
Gate to Source Charge
QGS
VGS = –4.0 V
0.8
nC
Gate to Drain Charge
QGD
ID = –3.0 A
0.9
nC
Body Diode Forward Voltage
VF(S-D)
IF = 3.0 A, VGS = 0 V
0.89
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
τ
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
VGS
Wave Form
VDS
Wave Form
VGS()
VDS()
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ625-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ625-T1B-A/XM | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ626 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ626-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ626-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,1.5A,0.31ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R |
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