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參數(shù)資料
| 型號： | 2SJ619 |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 100 V, 0.32 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 178K |
| 代理商： | 2SJ619 |
2SJ619
2009-09-29
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-OFF current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 6 A
0.25
0.32
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 6 A
0.15
0.21
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 6 A
4.5
7.7
S
Input capacitance
Ciss
1100
Reverse transfer capacitance
Crss
210
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
440
pF
Rise time
tr
18
Turn-ON time
ton
30
Fall time
tf
18
Switching time
Turn-OFF time
toff
65
ns
Total gate charge
(gate-source plus gate-drain)
Qg
48
Gate-source charge
Qgs
29
Gate-drain (“miller”) charge
Qgd
VDD 80 V, VGS = 10 V, ID = 16 A
19
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
16
A
Pulse drain reverse current
(Note 1)
IDRP
64
A
Forward voltage (diode)
VDSF
IDR = 16 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
160
μs
Reverse recovery charge
Qrr
IDR = 16 A, VGS = 0 V,
dIDR/dt = 50 A/μs
0.5
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
J619
Lot No.
Note 4
Part No. (or abbreviation code)
Duty <= 1%, tw = 10 μs
10 V
0 V
VGS
RL = 6.25 Ω
VDD 50 V
ID = 8 A
VOUT
50
Ω
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ619(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A SC-97 |
| 2SJ619_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications |
| 2SJ619_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SJ620 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV) |
| 2SJ620(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 4-Pin(2+2Tab) TFP T/R |
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