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參數(shù)資料
| 型號(hào)： | 2SJ601-Z |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開(kāi)關(guān)P溝道功率MOS FET工業(yè)用 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 2SJ601-Z |
Preliminary Data Sheet D14646EJ1V0DS
3
2SJ601
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
1
3
6.5±0.2
5.0±0.2
4
1
0
+
5
7
1
2.3
2.3
0
0.5±0.1
2.3±0.2
1
1.1±0.2
0.5-
+0.2
0.5-
+0.2
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.5±0.2
5.0±0.2
4
0
2.3 2.3
0.9
MAX.
5
1
2
M
1
0
+
2.3±0.2
0.5±0.1
1
0.8
MAX.
0.8
1
0
1.1±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ601-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO252 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO252 Bulk |
| 2SJ601-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-Z-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ602 | 制造商:KEXIN 制造商全稱(chēng):Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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