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參數(shù)資料
| 型號(hào)： | 2SJ601-Z-AZ |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封裝： | TO-252, MP-3Z, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | 2SJ601-Z-AZ |
Data Sheet D14646EJ4V0DS
2
2SJ601
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –60 V, VGS = 0 V
–10
A
Gate Leakage Current
IGSS
VGS = m20 V, VDS = 0 V
m10
A
Gate Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.5
–2.0
–2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = –10 V, ID = –18 A
15
30
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = –10 V, ID = –18 A
25
31
m
RDS(on)2
VGS = –4.0 V, ID = –18 A
32
46
m
Input Capacitance
Ciss
VDS = –10 V
3300
pF
Output Capacitance
Coss
VGS = 0 V
580
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
230
pF
Turn-on Delay Time
td(on)
ID = –18 A
11
ns
Rise Time
tr
VGS = –10 V
12
ns
Turn-off Delay Time
td(off)
VDD = –30 V
80
ns
Fall Time
tf
RG = 0
53
ns
Total Gate Charge
QG
VDD = –48 V
63
nC
Gate to Source Charge
QGS
VGS = –10 V
10
nC
Gate to Drain Charge
QGD
ID = –36 A
16
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 36 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 36 A, VGS = 0 V
52
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
108
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
L
VDD
VGS =
20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS()
10%
90%
VGS
10%
0
VDS()
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ601-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-Z-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
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