參數(shù)資料
型號: 2SJ595(TP)
元件分類: 小信號晶體管
英文描述: 6000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: TP, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 43K
代理商: 2SJ595(TP)
2SJ595
No.6978-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--6
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--24
A
Allowable Power Dissipation
PD
1W
Tc=25
°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0
--10
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.0
--2.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--3A
3.4
4.8
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--3A, VGS=--10V
170
220
m
RDS(on)2
ID=--1A, VGS=--4V
235
330
m
Input Capacitance
Ciss
VDS=--20V, f=1MHz
440
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
110
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
33
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
See specified Test Circuit
21
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
60
ns
Fall Time
tf
See specified Test Circuit
27
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--6A
14
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--6A
2
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--6A
3.7
nC
Diode Forward Voltage
VSD
IS=--6A, VGS=0
--0.91
--1.2
V
Marking : J595
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
0V
--10V
VIN
P.G
50
G
S
ID= --3A
RL=10
VDD= --30V
VOUT
2SJ595
VIN
D
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