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參數(shù)資料
| 型號： | 2SJ574 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 103K |
| 代理商： | 2SJ574 |
2SJ574
4
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2
-4
-6
-8
-10
5
4
3
2
1
–40
0
40
80
120
160
0
-150mA
-50m A
Pulse Test
Pulse Test
V = -4V
-50m A, -150m A
I = -300mA
-50m A, -150m A, -300m A
I = -300m A
D
-10V
Gate to Source Voltage V (V)
Drain to SOurce Saturation Voltage
vs. Gate to Source Voltage
V
D
D
-0.1
-0.5
-0.2
50
10
1.0
-1.0
V = -10 V
-4 V
Pulse Test
0.05
2
5
20
Drain Current I (A)
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature Tc ( °C)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
|
F
5
1.0
0.1
0.05
0.2
0.5
2
-0.1
-0.5
-.0.2
-1.0
Drain Current I (A)
Tc = –25 °C
75 °C
V = -10 V
Pulse Test
25 °C
S
(
D
R
S
(
D
R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ575 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ576 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ580 | Ultrahigh-Speed Switching Applications |
| 2SJ583 | Ultrahigh-Speed Switching Applications |
| 2SJ583LS | Ultrahigh-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ574_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ575 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ576 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ577 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ578 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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