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參數(shù)資料
| 型號： | 2SJ56H |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
| 中文描述： | 晶體管| MOSFET的| P通道| 200伏五（巴西）直| 8A條（丁）|至3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 2SJ56H |
2SJ563
No.6097–3/4
ID=
-
2A
SW Time
-
ID
A S O
PD
-
Ta
PD
-
Tc
VDD=
-
15V
VGS=
-
10V
IDP=
-
8A
Operation in this area
is limited by RDS(on).
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
Drain Current,I
D
– A
5
7
Ciss,Coss,Crss
-
VDS
VGS
-
Qg
f=1MHz
Ciss
Coss
Crss
2
3
5
7
2
3
5
7
VDS=
-
10V
ID=
-
2A
td(on)
tr
td(off)
tf
100ms
10ms
100
μ
s
DCoperation
20
60
40
80
120
100
140
160
0
0
1.0
2.0
3.0
3.5
4.0
-
8
-
4
0
-
12
-
16
-
20
-
24
-
32
-
28
100
10
1000
10
1.0
100
-
1.0
-
0.1
-
0.1
-
0.01
-
1.0
-
10
-
-
0.1
20
60
40
Ambient Temperature,Ta – C
80
120
100
140
160
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1.4
1.5
1
2
3
4
5
6
7
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
S
D
D
Drain-to-Source Voltage,V
DS
– V
A
D
A
D
Case Temperature,Tc – C
Tc=25
°
C
Single pulse
Mounedonacrmcbord(250mm
2
×
08mm
C
G
G
Drain-to-Source Voltage,V
DS
– V
Total Gate Charge, Qg – nC
RDS(on)
-
Tc
VGS=0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
ID=-0.3A,VGS=-4V
ID=-1.0A,VGS=-10V
T2
°
C
2
°
C
7
°
C
IF
-
VSD
200
0
-
60
400
0
Case Temperature, Tc – C
20
-
20
-
40
40
60
80
100
120
160
140
600
800
100
300
500
700
-
0.001
-
0.01
-
0.1
-
1.0
-
10
0
-
0.2
-
0.4
-
0.6
-
1.0
-
0.8
-
1.2
-
1.4
F
F
S
O
D
Diode Forward Voltage, VSD – V
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