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參數(shù)資料
| 型號(hào)： | 2SJ567(2-7J1B) |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, SC-64, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 177K |
| 代理商： | 2SJ567(2-7J1B) |
2SJ567
2009-07-13
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 1.5 A
1.6
2.0
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 1.5 A
1.0
2.0
S
Input capacitance
Ciss
410
Reverse transfer capacitance
Crss
40
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
145
pF
Rise time
tr
20
Turn-on time
ton
45
Fall time
tf
15
Switching time
Turn-off time
toff
85
ns
Total gate charge
(Gate source plus gate-drain)
Qg
10
Gate-source charge
Qgs
6
Gate-drain (“Miller”) charge
Qgd
VDD ≈ 160 V, VGS = 10 V,
ID = 2.5 A
4
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
2.5
A
Pulse drain reverse current
(Note 1)
IDRP
10
A
Forward voltage (diode)
VDSF
IDR = 2.5 A, VGS = 0 V
2.0
V
Reverse recovery time
trr
135
ns
Reverse recovery charge
Qrr
IDR = 2.5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
0.81
μC
Marking
Duty
≤ 1%, tw = 10 μs
10 V
0 V
VGS
RL = 66.7 Ω
VDD ≈ 100 V
ID = 1.5 A VOUT
50
Ω
J567
Lot No.
Note 4
Part No.
Note 4: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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