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參數(shù)資料
| 型號(hào)： | 2SJ563 |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 30 V, 0.315 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PCP, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 181K |
| 代理商： | 2SJ563 |
2SJ563
No.6097–3/4
ID=- 2A
SW Time - I D
A S O
P D - Ta
P D - Tc
VDD=-15V
VGS=-10V
IDP=- 8A
Operation in this area
is limited by RDS(on).
2
3
5
7
2
3
5
7
2
3
5
7
23
5
7
23
5
7
23
2
3
5
7
2
3
5
7
72
3
5
7
23
5
7
Ciss,Coss,Crss - VDS
VGS - Qg
f= 1MHz
Ciss
Coss
Crss
2
3
5
7
2
3
5
7
VDS=-10V
ID=-2A
td(on)
t r
td(off)
tf
100ms
10ms
1ms
100
s
DC
operation
20
60
40
80
120
100
140
160
0
1.0
2.0
3.0
3.5
4.0
-8
-4
0
-12
-16
-20
-24
-32
-28
100
10
1000
10
1.0
100
-1.0
-0.1
-0.01
-1.0
-10
-1.0
-10
-0.1
20
60
40
80
120
100
140
160
0
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1.4
1.5
1234567
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
Switching
Time,
SW
Time
–
n
s
Drain Current, ID –A
Drain
Current
,I
D
–A
Drain-to-Source Voltage, VDS –V
Allowable
Power
Dissipation,
P
D
–W
Allowable
Power
Dissipation,
P
D
–W
Ambient Temperature, Ta – C
Case Temperature, Tc – C
Tc=25
°C
Single pulse
Mounted
on
a
ceramic
board
(250mm
2
×0.8mm)
Ciss,
Coss,
Crss
–
p
F
Gate-to-Source
Voltage,
V
GS
–
V
Drain-to-Source Voltage, VDS –V
Total Gate Charge, Qg – nC
R DS(on) - Tc
VGS=0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
ID=-0.3A,V
GS
=-4V
ID=-1.0A,V
GS
=-10V
Tc=-25
°C
25
°C
75
°C
I F - VSD
200
0
400
020
-20
-40
-60
40
60
80
100
120
160
140
600
800
100
300
500
700
-0.001
-0.01
-0.1
-1.0
-10
0
-0.2
-0.4
-0.6
-1.0
-0.8
-1.2
-1.4
Case Temperature, Tc – C
Forward
Current,
I F
–A
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
–m
Diode Forward Voltage, VSD –V
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