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參數(shù)資料
| 型號(hào)： | 2SJ559 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | 2SJ559 |
Data Sheet D13801EJ1V0DS00
3
2SJ559
TYPICAL CHARACTERISTICS (TA = 25°C)
VDS = –3 V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TA - Ambient Temperature - C
0
30
60
90
120
150
0
20
dT
-
Derating
Factor
-
%
40
60
80
100
TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
0
–0.8
–1.6
–2.4
–3.2
–4.0
ID
-
Drain
Current
-
mA
–0.001
–0.01
–0.1
–1
–10
–100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - mA
–0.1
–1
–10
–100
–1000
Iy
fs
I-
Forward
Transfer
Admittance
-
mS
1
10
100
1000
VDS = –3 V
TA = 125 C
TA = 75 C
TA = 25 C
TA = –25 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - mA
–0.1
–1
–10
–100
–1000
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
20
0
10
30
40
50
60
VGS = –2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - mA
–0.1
–1
–10
–100
–1000
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0
10
20
30
40
50
60
TA = 125 C
TA = 75 C
VGS = –4 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
0
–1
–2
–3
–4
–5
ID
-
Drain
Current
-
mA
0
–20
–40
–60
–80
–100
VGS = –3 V
VGS = –2.5 V
VGS = –10 V
VGS = –6 V
VGS = –4 V
TA = 25 C
TA = –25 C
TA = 125 C
TA = 75 C
TA = 125 C
TA = 75 C
TA = –25 C
TA = 25 C
TA = –25 C
TA = 25 C
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