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參數(shù)資料
| 型號(hào)： | 2SJ553(S) |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 60K |
| 代理商： | 2SJ553(S) |
2SJ553(L),2SJ553(S)
5
–5
–4
–3
–2
–1
0
–4
–8
–12
–16
–20
0.1
0.08
0.06
0.04
0.02
–40
0
40
80
120
160
0
1
0.5
0.05
0.02
0.01
–1
–3
–10
–30
–100
–300
–1000
–20 A
0.2
0.1
V
= –4 V
GS
–10,–20A
Pulse Test
I
= –50 A
D
GS
V
= –10 V
–50 A
–20 A
–10 V
–10 A
GS
V
= –4 V
–10 A
–0.1
–1
–10
–100
–0.3
–3
–30
100
10
0.1
1
0.3
3
30
25 °C
75 °C
V
= –10 V
DS
Pulse Test
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
I = –50 A
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ553(S) | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553(L) | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553(L) | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553(L) | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ555-E | 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ553S-TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ553STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ553STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| 2SJ554 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ554-E | 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,45A,28m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 45A 3-Pin(3+Tab) TO-3P Box |
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