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參數(shù)資料
| 型號(hào)： | 2SJ553(L) |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SJ553(L) |
2SJ553(L),2SJ553(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
—
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.028
0.037
I
D = –15A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.038
0.055
I
D = –15A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
1525—
S
I
D = –15A, VDS = –10V
Note4
Input capacitance
Ciss
—
2500
—
pF
V
DS = –10V
Output capacitance
Coss
—
1300
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
300
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
25
—
ns
V
GS = –10V, ID = –15A
Rise time
t
r
—
150
—
ns
R
L = 2
Turn-off delay time
t
d(off)
—
350
—
ns
Fall time
t
f
—
220
—
ns
Body–drain diode forward voltage
V
DF
—
–0.95
—
V
I
F = –30A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
100
—
ns
I
F = –30A, VGS = 0
diF/ dt =50A/s
Note:
4. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ553(L) | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ555-E | 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ585LS | 6.5 A, 250 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ595(TP-FA) | 6000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ595(TP) | 6000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ553-L(E) | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) LDPAK(L) Box |
| 2SJ553L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) LDPAK(L) Box Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,30A,28m ohm,LDPAK-L |
| 2SJ553S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ553S-TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ553STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
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