參數(shù)資料
型號: 2SJ549S
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel MOS FET High Speed Power Switching
中文描述: 硅P通道MOS FET的高速電源開關
文件頁數(shù): 5/9頁
文件大小: 56K
代理商: 2SJ549S
2SJ549(L),2SJ549(S)
5
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20
40
–100
8
16
24
32
1000
100
300
30
3
10
1
–0.1 –0.2
–0.5 –1
Drain Current I (A)
–2
–5
–10
DS
V
GS
V
V = –50 V
–25 V
–10 V
I = –10 A
V = –10 V
–25 V
–50 V
tf
r
d(off)
t
d(on)
t
V = –10 V, V = –30 V
Pw = 5 μs, duty < 1 %
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
S
Switching Characteristics
500
200
100
20
50
10
5
–0.1 –0.2
–1
–5
–10
0
–10
–20
–30
–40
–50
2000
1000
500
200
100
50
–0.5
–2
di / dt = 50 A / μs
V = 0, Ta = 25 °C
20
10
V = 0
f = 1 MHz
Ciss
Coss
Crss
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
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