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參數(shù)資料
| 型號： | 2SJ549 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SJ549 |
2SJ549(L),2SJ549(S)
5
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20
40
–100
8
16
24
32
1000
100
300
30
3
10
1
–0.1 –0.2
–0.5 –1
Drain Current I (A)
–2
–5
–10
DS
V
GS
V
V = –50 V
–25 V
–10 V
I = –10 A
V = –10 V
–25 V
–50 V
tf
r
d(off)
t
d(on)
t
V = –10 V, V = –30 V
Pw = 5 μs, duty < 1 %
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
S
Switching Characteristics
500
200
100
20
50
10
5
–0.1 –0.2
–1
–5
–10
0
–10
–20
–30
–40
–50
2000
1000
500
200
100
50
–0.5
–2
di / dt = 50 A / μs
V = 0, Ta = 25 °C
20
10
V = 0
f = 1 MHz
Ciss
Coss
Crss
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ549L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ549S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ554 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ555 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ561 | Zener Diode,Single, Two Terminal,33V V(Z),5%,DO-5 RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ549(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-262VAR |
| 2SJ549(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-263VAR |
| 2SJ549L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ549L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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