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參數資料
| 型號： | 2SJ546 |
| 元件分類： | JFETs |
| 英文描述： | 0.155 ohm, POWER, FET |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數： | 6/10頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 2SJ546 |
2SJ546
5
–4.0
–3.2
–2.4
–1.6
–0.8
0
–4
–8
–12
–16
–20
I
= –15 A
D
–10 A
–5 A
Pulse Test
–0.1
–1
–10
–100
–0.3
–3
–30
10
1
0.01
0.40
0.32
0.24
0.16
0.08
–40
0
40
80
120
160
0
Pulse Test
0.1
0.03
0.3
3
V
= –4 V
GS
–10 V
Pulse Test
–5, –10, –15 A
V
= –4 V
GS
–10 V
I
= –15 A
D
–10 A –5 A
–0.1
–1
–10
–100
–0.3
–3
–30
100
10
0.1
1
0.3
3
30
25 °C
Tc = –25 °C
75 °C
V
= –10 V
DS
Pulse Test
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ548 | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ551L-E | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ551STL-E | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ555-E | 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ556 | 0.055 ohm, POWER, FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ546(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ546-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ547 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ547-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ548 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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