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參數(shù)資料
| 型號(hào)： | 2SJ546 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | 2SJ546 |
2SJ546
5
0
–10
–20
–30
–40
–50
10000
1000
3000
300
10
30
100
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
8
Gate Charge Qg (nc)
16
24
32
40
–20
1000
200
500
100
20
10
–0.1 –0.2
50
V = 0
f = 1 MHz
Ciss
Coss
Crss
–100
V = –10 V
–25 V
–50 V
I = –15 A
V
GS
V
DS
V = –50 V
–25 V
–10 V
–1
–2
–10 –20
–5
–0.5
Drain Current I (A)
V = –10 V, V = –30 V
PW = 5 μs, duty < 1 %
tf
r
d(on)
t
d(off)
t
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
S
Switching Characteristics
D
D
G
G
Dynamic Input Characteristics
500
200
100
20
50
10
5
–0.1
–0.3
–3
–1
–10
di / dt = 50 A / μs
V = 0, Ta = 25 °C
–20
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ547 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ548 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ549 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ549L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ549S | Silicon P Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ546(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ546-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ547 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ547-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ548 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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