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參數(shù)資料
| 型號： | 2SJ546-E |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2SJ546-E |
LV51137T
No.A1150-6/8
Excessive charger detection/release
If the voltage between V- pin and VSS pin becomes equal to or less than the excessive charger detection voltage by
connecting a charger, no charging can be made by turning the Cout pin “L” after delay time and turning off the
external Nch MOS FET. If that voltage returns to equal to or more than the excessive charger detection voltage
during detection delay time, the excessive charger detection will be stopped. If the voltage between V- pin and VSS
pin becomes equal to or more than the excessive charger detection voltage after excessive charger detection, the Cout
returns to “H” after delay time. The detection/return delay time is set internally.
If Dout pin is “L”, charging will be made through the parasitic diode of external Nch FET on Dout pin. In that case,
the voltage between V- pin and VSS pin is nearly -Vf which is less than the over-charger detection voltage, therefore
no excessive charger detection will be made during over-discharge, over-current and short-circuit detection.
Furthermore, if excessive voltage charger is connected to the over-discharged battery, no excessive charger detection
is made while the Dout pin is “L”. But the battery is continued charging through the parasitic diode. If the battery
voltage rises to the over-discharge detection voltage and the voltage between V- pin and VSS pin remains equal to or
less than the excessive charger detection voltage, the delay operation will be started after Dout pin turns to “H.”
0V cell charging operation
If voltage between VDD and V becomes equal to or more than the 0V cell charging lowest operation voltage when
the cell voltage is 0V, the Cout pin turns to “H” and charging is enabled.
Shorten the test time
By turning T pin to the VDD , the delay times set by the internal counter can be cut. If T pin is open, the delay times
are normal. Delay time not set by the counter just like as short circuit detection delay cannot be controlled by this pin.
And we recommend that T pin is connected to VSS to prevent malfunction when excessive current flows in short
circuit operation.
Operation in case of detection overlap
Overlap state
Operation in case of
detection overlap
State after detection
When, during over-
charge detection,
Over-discharge
detection is made,
Over-charge detection is preferred. If over-
discharge state continues even after over-
charge detection, over-discharge detection is
resumed.
When over-charge detection is made first, V- is
released. When over-discharge is detected after
over-charge detection, the standby state is not
effectuated. Note that V- is connected to VDD
via 200k.
Over-current
detection is made,
(*1) Both detections’ can be made in parallel.
Over-charge detection continues even when the
over-current state occurs. If the over-charge
state occurs first, over-current detection is
interrupted.
(*2) When over-current is detected first, V- is
connected to VSS via 15k. When over-charge
detection is made first, V- is released.
When, during over-
discharge detection,
Over-charge detection
is made,
Over-discharge detection is interrupted and
over-charge detection is preferred. When over-
discharge state continues even after over-
charge detection, over-discharge detection is
resumed.
The standby state is not effectuated when over-
discharge detection is made after over-charge
detection. Note that V- is connected to VDD via
200k.
Over-current
detection is made,
(*3) Both detections can be made in parallel.
Over-discharge detection continues even when
the over-current state is effectuated first. Over-
current detection is interrupted when the over-
discharge state is effectuated first,
(*4) If over-current is detected in advance, V will
be connected to VSS via 15k. After detecting
over-discharge, V will be connected to VDD via
200k to get into standby state. If over-
discharge is detected in advance, V will be
connected to VDD via 200k to get into standby
state.
Over-charge detection
is made,
(*1)
(*2)
When, during over-
current detection,
Over-discharge
detection is made,
(*3)
(*4)
(Note) Short-circuit detection can be made independently.
Over-charger detection does not work during over-discharge, over-current or short-circuit detection and
the delay time starts after return from these states.
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| 2SJ546 | 0.155 ohm, POWER, FET |
| 2SJ548 | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ551L-E | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ551STL-E | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ547 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ547-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ548 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ548-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ549 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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