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參數(shù)資料
| 型號： | 2SJ543 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 69K |
| 代理商： | 2SJ543 |
2SJ543
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltage drain current
–60
—
—
V
I
D
= –10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±
16V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –10A, V
GS
= –10V
Note4
I
D
= –10A, V
GS
= –4V
Note4
I
D
= –10A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
±
20
—
—
V
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
–10
μ
A
μ
A
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
–1.0
—
–2.0
V
Static drain to source on state
—
0.042
0.055
resistance
—
0.065
0.095
Forward transfer admittance
10
16
—
S
Input capacitance
—
1750
—
pF
Output capacitance
Coss
—
800
—
pF
Reverse transfer capacitance
Crss
—
180
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
16
—
ns
V
GS
= –10V, I
D
= –10A
R
L
= 3
Rise time
—
100
—
ns
Turn-off delay time
—
230
—
ns
Fall time
—
140
—
ns
Body–drain diode forward voltage
—
–1.0
—
V
I
F
= –20A, V
GS
= 0
I
= –20A, V
GS
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
100
—
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ543(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ543-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ544 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ544-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220AB Box |
| 2SJ545 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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