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參數(shù)資料
| 型號： | 2SJ543-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 2SJ543-E |
2SJ543
Rev.4.00 Sep 07, 2005 page 5 of 7
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
50
25
50
75
100
125
150
0
10
20
30
40
Channel Temperature Tch (°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
IAP = –20 A
VDD = –25 V
duty < 0.1 %
Rg
≥ 50
–50
0
–10
–20
–30
–40
0
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
–5 V
VGS = 0, 5 V
–10 V
Avalanche Test Circuit
Avalanche Waveform
0
ID
VDS
IAP
V(BR)DSS
VDD
EAR =
L IAP
2
2
1
VDSS
VDSS – VDD
D.U.T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
–15 V
L
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γs
(t)
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pul
se
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) θch – c
θch – c = 1.67°C/W, Tc = 25°C
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PDF描述 |
|---|---|
| 2SJ544-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ547 | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ559 | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ559-A | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ563 | 2 A, 30 V, 0.315 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ544 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ544-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220AB Box |
| 2SJ545 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ545(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ545-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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