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參數(shù)資料
| 型號(hào)： | 2SJ541 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | 2SJ541 |
2SJ541
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
–60
V
Gate to source voltage
±
20
V
Drain current
–15
A
Drain peak current
Note1
–60
A
Body-drain diode reverse drain current I
DR
Avalanche current
–15
A
I
AP
E
AR
Pch
Note2
Note3
–15
A
Avalanche energy
Note3
19
mJ
Channel dissipation
50
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
–60
—
—
V
I
D
= –10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±
16V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –8A, V
GS
= –10V
Note4
I
D
= –8A, V
GS
= –4V
Note4
I
D
= -8A, V
DS
= -10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
±
20
—
—
V
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
–10
μ
A
μ
A
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
–1.0
—
–2.0
V
Static drain to source on state
—
0.075
0.095
resistance
—
0.105
0.155
Forward transfer admittance
6.5
11
—
S
Input capacitance
—
850
—
pF
Output capacitance
Coss
—
420
—
pF
Reverse transfer capacitance
Crss
—
110
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
—
12
—
ns
V
GS
= –10V, I
D
= –8A
R
L
=3.75
Rise time
—
75
—
ns
Turn-off delay time
—
125
—
ns
Fall time
—
75
—
ns
Body–drain diode forward voltage V
DF
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
–1.1
—
V
I
F
= –15A, V
GS
= 0
I
= –15A, V
GS
= 0
diF/ dt =50A/
μ
s
t
rr
—
70
—
ns
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| 2SJ542 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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