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參數(shù)資料
| 型號： | 2SJ539-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 88K |
| 代理商： | 2SJ539-E |
2SJ539
Rev.3.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0–2
–4
–6
–8
–10
0
–2
–4
–6
–8
0
–1–2–3–4–5
Tc = 75°C
80
0
20
40
60
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–6 V
–4 V
–3.5 V
–3 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–20
–2
–5
–50
–10
–1
–0.2
–0.5
–0.1
–0.3
–1
–3
–10
–30
–100
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
0
–0.4
–0.8
–1.2
–1.6
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–2 A
–1 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–0.3
–10
–30
–0.1
–3
–1
–100
1
0.5
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ540 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ540-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ541 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ541-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(3+Tab) TO-220AB Box Bulk 制造商:Renesas Electronics Corporation 功能描述:Bulk |
| 2SJ542 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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