參數(shù)資料
型號: 2SJ535
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel MOS FET High Speed Power Switching
中文描述: 硅P通道MOS FET的高速電源開關(guān)
文件頁數(shù): 2/9頁
文件大?。?/td> 54K
代理商: 2SJ535
2SJ535
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
–60
V
Gate to source voltage
±
20
V
Drain current
–30
A
Drain peak current
Note1
–120
A
Body-drain diode reverse drain current I
DR
Avalanche current
–30
A
I
AP
E
AR
Pch
Note2
Note3
–30
A
Avalanche energy
Note3
77
mJ
Channel dissipation
35
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
–60
V
I
D
= –10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±
16V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –15A, V
GS
= –10V
Note4
I
D
= –15A, V
GS
= –4V
Note4
I
D
= –15A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
±
20
V
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
–10
μ
A
μ
A
Gate to source leak current
±
10
Gate to source cutoff voltage
–1.0
–2.0
V
Static drain to source on state
0.028
0.037
resistance
0.038
0.055
Forward transfer admittance
15
25
S
Input capacitance
2500
pF
Output capacitance
Coss
1300
pF
Reverse transfer capacitance
Crss
300
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
25
ns
V
GS
= –10V, I
D
= –15A
R
L
= 2
Rise time
150
ns
Turn-off delay time
350
ns
Fall time
220
ns
Body–drain diode forward voltage V
DF
Body–drain diode reverse
recovery time
Note:
4. Pulse test
–0.95
V
I
F
= –30A, V
GS
= 0
I
= –30A, V
GS
= 0
diF/ dt =50A/
μ
s
t
rr
100
ns
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