參數(shù)資料
型號： 2SJ534-E
元件分類： JFETs
英文描述： 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： SC-67, TO-220FM, 3 PIN
文件頁數(shù)： 3/4頁
文件大?。?/td> 88K
代理商： 2SJ534-E
2SA965
2004-07-07
3
Collector current IC (mA)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(s
a
t)
(
V
)
Collector-emitter voltage VCE (V)
IC – VCE
C
olle
ct
or
cur
re
nt
I
C
(m
A)
Ambient temperature Ta (°C)
PC – Ta
C
ollec
tor
po
wer
dis
si
pati
on
P
C
(W
)
20
0
40
60
100
120
1.0
0.4
0
0.2
0.6
0.8
80
140
180
160
Collector current IC (mA)
hFE – IC
DC
cur
re
nt
gain
h
FE
Base-emitter voltage VBE (V)
IC – VBE
Coll
ect
or
cur
re
nt
I
C
(m
A)
)
600
800
0
400
200
0.2
0.4
0.6
0.8
1.0
1.2
Ta = 100°C
25
Common emitter
VCE = 5 V
1000
0
800
600
400
200
2
4
6
8
10
12
Common emitter
Ta = 25°C
5
15
10
IB = 1 mA
7
3
4
2
14
0
300
Common emitter
IC/IB = 10
3
0.03
3
1
0.3
0.1
0.05
10
30
100
1000
Ta = 100°C
25
0.5
Collector-emitter voltage VCE (V)
Safe Operating Area
Coll
ect
or
cur
re
nt
I
C
(m
A)
3000
1
0.5
3
1
3
10
30
100
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
300
1000
100
300
10
30
5
50
500
5
50
1000
10
3
500
300
100
50
10
30
100
300
1000
Ta = 100°C
25
30
Common emitter
VCE = 5 V
相關(guān)PDF資料
PDF描述
2SJ534 0.11 ohm, POWER, FET
2SJ543-E 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ544-E 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ547 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ559 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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