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參數(shù)資料
| 型號(hào)： | 2SJ531 |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SJ531 |
2SJ531
5
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
–4
–8
–12
–16
–20
–1
–5
–20
–100
–2
–10
–50
1
0.2
0.01
–40
0
40
80
120
160
0
0.05
0.02
0.1
0.5
–0.1
–1
–10
–100
–0.3
–3
–30
100
10
0.1
1
0.3
3
30
I
= –20 A
D
–10 A
–5 A
V
= –4 V
GS
–10 V
0.30
0.25
0.20
0.15
0.10
0.05
–5, –10, –20 A
V
= –4 V
GS
–10 V
I
= –20 A
D
–5, –10 A
25 °C
Tc = –25 °C
75 °C
DS
V
= –10 V
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Gate to Source Voltage
V
(V)
GS
Drain Current
I
(A)
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ532 | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ533-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ534 | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ535-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ539-E | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ531-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220CFM Magazine |
| 2SJ533 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ533-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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