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參數(shù)資料
| 型號(hào)： | 2SJ531 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 2SJ531 |
2SJ531
4
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
–4
–8
–12
–16
–20
–1
–5
–20
–100
–2
–10
–50
1
0.2
0.01
–40
0
40
80
120
160
0
0.05
0.02
0.1
0.5
–0.1
–1
–10
–100
–0.3
–3
–30
100
10
0.1
1
0.3
3
30
I = –20 A
–10 A
–5 A
V = –4 V
–10 V
0.30
0.25
0.20
0.15
0.10
0.05
–5, –10, –20 A
V = –4 V
–10 V
I = –20 A
–5, –10 A
25 °C
Tc = –25 °C
75 °C
V = –10 V
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
Pulse Test
Gate to Source Voltage V (V)
Drain Current I (A)
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PDF描述 |
|---|---|
| 2SJ533 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ550 | BRIDGE RECTIFIER,1-PHASE FULL-WAVE,200V V(RRM),M:ML029MW029 |
| 2SJ550L | BRIDGE RECTIFIER,1-PHASE FULL-WAVE,600V V(RRM),M:ML029MW029 |
| 2SJ550S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ551 | Silicon P Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ531-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220CFM Magazine |
| 2SJ533 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ533-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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