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參數(shù)資料
| 型號(hào)： | 2SJ530STL-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | 2SJ530STL-E |
2SJ530(L), 2SJ530(S)
Rev.5.00 Sep 07, 2005 page 4 of 8
0.5
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.1
0.2
0.3
0.4
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –15 A
–5 A, –10 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
30
3
10
0.3
1
0.1
–0.1
–0.3
–1
–3
–30
–10
–100
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5 –1
–2
–10
–5
–20
500
200
50
100
20
5
10
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
5000
1000
2000
500
200
20
50
100
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
816
24
32
40
VDS
VGS
1000
100
300
30
3
10
1
–0.2
–0.5 –1
–5
–2
–10 –20
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –10 V
–25 V
–50 V
VDD = –50 V
–25 V
–10 V
VGS = –4 V
–10 A
–15 A
–5 A
VGS = –10 V, VDD = –30 V
PW = 5
s, duty ≤ 1 %
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