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參數(shù)資料
| 型號： | 2SJ529L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 72K |
| 代理商： | 2SJ529L |
2SJ529(L),2SJ529(S)
5
–1.0
–0.8
–0.6
–0.4
–0.2
0
–4
–8
–12
–16
–20
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
–10 V
I = –5 A
V = –4 V
–0.1
–1
–10
0.1
10
20
5
1
0.5
–0.2
–0.5
–2
–5
1
0.5
0.05
0.02
0.01
–0.1
–0.3
–1
–3
–10
–30
–100
–1, –2 A
I = –5 A
–2 A
–1 A
0.2
0.1
–10 V
V = –4 V
–1 A
–2 A
–5 A
2
75 °C
25 °C
Ta = –25 °C
Pulse Test
Pulse Test
Pulse Test
V = –10 V
Pulse Test
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ529 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ530 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ530L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ530S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ531 | Silicon P Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ529L-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) DPAK(L)-(2) T/R |
| 2SJ529S | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Hight Speed Power Switching |
| 2SJ529S-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK(S) Bulk |
| 2SJ529STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ529STR-E | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:0 |
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