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參數(shù)資料
| 型號： | 2SJ528L-E |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 94K |
| 代理商： | 2SJ528L-E |
2SJ528(L), 2SJ528(S)
Rev.3.00 Sep 07, 2005 page 5 of 8
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
10
25
50
75
100
125
150
0
2
4
6
8
Channel Temperature Tch (°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
IAP = –7 A
VDD = –25 V
duty < 0.1 %
Rg
≥ 50
–10
0
–2
–4
–6
–8
0
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
–5 V
VGS = 0, 5 V
–10 V
Avalanche Test Circuit
Avalanche Waveform
0
ID
VDS
IAP
V(BR)DSS
VDD
EAR =
L IAP
2
2
1
VDSS
VDSS – VDD
D.U.T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
–15 V
L
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γs
(t)
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) θch – c
θch – c = 6.25°C/W, Tc = 25°C
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PDF描述 |
|---|---|
| 2SJ528STL-E | 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ528L | 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ531 | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ532 | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ533-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ528S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S) T/R |
| 2SJ528S-E | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S) |
| 2SJ528STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ529 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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