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參數(shù)資料
| 型號(hào)： | 2SJ527STL-E |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-63, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 2SJ527STL-E |
2SJ527(L), 2SJ527(S)
Rev.3.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–5
A
Drain peak current
ID (pulse)
Note 1
–20
A
Body to drain diode reverse drain current
IDR
–5
A
Avalanche current
IAP
Note 3
–5
A
Avalanche energy
EAR
Note 3
2.1
mJ
Channel dissipation
Pch
Note 2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
–10
A
VDS = –60 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
—
0.3
0.4
ID = –3 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
—
0.5
0.8
ID = –3 A, VGS = –4 V
Note 4
Forward transfer admittance
|yfs|
1.8
3
—
S
ID = –3 A, VDS = –10 V
Note 4
Input capacitance
Ciss
—
220
—
pF
Output capacitance
Coss
—
110
—
pF
Reverse transfer capacitance
Crss
—
35
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
10
—
ns
Rise time
tr
—
30
—
ns
Turn-off delay time
td (off)
—
45
—
ns
Fall time
tf
—
35
—
ns
VGS = –10 V
ID = –3 A
RL = 10
Body to drain diode forward voltage
VDF
—
–1.35
—
V
IF = –5 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
55
—
ns
IF = –5 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
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