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參數(shù)資料
| 型號： | 2SJ527 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SJ527 |
2SJ527(L),2SJ527(S)
4
–5
–4
–3
–2
–1
0
–4
–8
–12
–16
–20
10
1
–0.1
–0.3
–1
–3
–10
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
0
3
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
I = –5 A
–1 A
–2 A
0.1
0.3
–1 A
I = –4 A
10
1
–0.1 –0.2
–0.5
–1
–2
–5
–10
2
5
0.1
0.2
0.5
25 °C
Tc = –25 °C
75 °C
V = –10 V
Pulse Test
–30
V = –10 V
–4 V
Pulse Test
–5 A
–2 A
V = –4 V
–1, –2 A
–10 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ527L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ527S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528S | Silicon P Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ527L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ527-L(E) | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box |
| 2SJ527L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box 制造商:Renesas Electronics Corporation 功能描述:P-channel MOSFET, 60V,5A,3ohm,DPAK-L |
| 2SJ527S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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