參數(shù)資料
型號: 2SJ522
元件分類: JFETs
英文描述: 5 A, 400 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SMP, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 30K
代理商: 2SJ522
2SJ522
No.7127-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--400
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
--5
A
Drain Current (Pulse)
IDP
--20
A
Allowable Power Dissipation
PD
1.65
W
Tc=25
°C70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--10mA, VGS=0
--400
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--320V, VGS=0
--1.0
mA
Gate-to-Sourse Leakage Current
IGSS
VGS=±30V, VDS=0
±100
nA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--2.0
--3.0
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--2.5A
1.3
2.6
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=--2.5A, VGS=--10V
1.5
2.0
Input Capacitance
Ciss
VDS=--20V, f=1MHz
1500
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
240
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
90
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
25
ns
Rise Time
tr
See specified Test Circuit.
70
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
340
ns
Fall Time
tf
See specified Test Circuit.
150
ns
Diode Forward Voltage
VSD
IS=--5A, VGS=0
-
-1.5
V
Marking : J522
*(Note) Be careful in handling the 2SJ522 because it has no protection diode between gate and source.
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
0V
--10V
VIN
P.G
50
G
S
ID= --2.5A
RL=80
VDD= --200V
VOUT
2SJ522
VIN
D
相關(guān)PDF資料
PDF描述
2SJ522-TL 5 A, 400 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
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