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參數(shù)資料
| 型號(hào)： | 2SJ518 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 2SJ518 |
2SJ518
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
–60
—
—
V
I
D
= –10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±
16V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –1A, V
GS
= –10V
Note4
I
D
= –1A, V
GS
= –4V
Note4
I
D
= –1A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
±
20
—
—
V
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
–10
μ
A
μ
A
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
–1.0
—
–2.0
V
Static drain to source on state
—
0.35
0.46
resistance
—
0.45
0.63
Forward transfer admittance
1.2
2.0
—
S
Input capacitance
—
220
—
pF
Output capacitance
Coss
—
110
—
pF
Reverse transfer capacitance
Crss
—
35
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
10
—
ns
V
GS
= –10V, I
D
= –1A
R
L
= 30
Rise time
—
11
—
ns
Turn-off delay time
—
45
—
ns
Fall time
—
30
—
ns
Body–drain diode forward voltage
—
–1.05
—
V
I
D
= –2A, V
GS
= 0
I
= –2A, V
= 0
diF/ dt = 50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
5. Marking is “AZ”
—
50
—
ns
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|---|---|
| 2SJ518AZTL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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