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參數(shù)資料
| 型號(hào)： | 2SJ517TR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | UPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 84K |
| 代理商： | 2SJ517TR |
2SJ517
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–20
V
Gate to source voltage
V
GSS
±10
V
Drain current
I
D
–2
A
Drain peak current
I
D(pulse)
Note1
–4
A
Body-drain diode reverse drain current
I
DR
–2
A
Channel dissipation
Pch
Note2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 100s, duty cycle ≤ 10 %
2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–20
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±10
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
A
V
DS = –20 V, VGS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±8V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–0.5
—
–1.5
V
I
D = –1mA, VDS = –10V
Static drain to source on state
resistance
R
DS(on)
—
0.18
0.24
I
D = –1A, VGS = –4V
Note3
Static drain to source on state
resistance
R
DS(on)
—
0.27
0.43
I
D = –1A, VGS = –2.5V
Note3
Forward transfer admittance
|y
fs|
1.8
3.0
—
S
I
D = –1A, VDS = –10V
Note3
Input capacitance
Ciss
—
320
—
pF
V
DS = –10V
Output capacitance
Coss
—
190
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
90
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
14
—
ns
I
D = –1A, RL = 10
Rise time
t
r
—
75
—
ns
V
GS = –4V
Turn-off delay time
t
d(off)
—
90
—
ns
Fall time
t
f
—
90
—
ns
Body–drain diode forward voltage
V
DF
—
–0.95
—
V
I
F = –2A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
70
—
ns
I
F = –2A, VGS = 0
diF/ dt =50A/s
Note:
3. Pulse test
4. Marking is “YY”.
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PDF描述 |
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| 2SJ517TR | SMALL SIGNAL, FET |
| 2SJ517YYTR-E | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ517YYTL | 制造商:Hitachi 功能描述: |
| 2SJ517YYTL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 20V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,20V,2A,0.18ohm,UPAK 制造商:Renesas 功能描述:Trans MOSFET P-CH 20V 2A 4-Pin(3+Tab) UPAK T/R |
| 2SJ517YYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518AZTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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