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參數(shù)資料
| 型號： | 2SJ517 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | UPAK-3 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SJ517 |
2SJ517
4
Main Characteristics
2.0
1.5
1.0
0.5
0
50
100
150
200
–0.1 –0.3
–1
–3
–10
–30
–100
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–5
–4
–3
–2
–1
0
–2
–4
–6
–8
–10
–5
–4
–3
–2
–1
0
–1
–2
–3
–4
–5
Channel
Dissipation
Pch
(W)
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Test Condition :
When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)
1 ms
Ta = 25 °C
DC
Operation
100
s
Operation in
this area is
limited by R DS(on)
10
s
PW
=
10
ms
(1
shot)
–10 V
V
= –1.5 V
GS
–4 V
–3 V
–2 V
–2.5 V
Pulse Test
Tc = 75°C
25°C
–25°C
V
= –10 V
Pulse Test
DS
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PDF描述 |
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| 2SJ549L | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549S-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549S-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549S | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549STL-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ517YYTL | 制造商:Hitachi 功能描述: |
| 2SJ517YYTL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 20V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,20V,2A,0.18ohm,UPAK 制造商:Renesas 功能描述:Trans MOSFET P-CH 20V 2A 4-Pin(3+Tab) UPAK T/R |
| 2SJ517YYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518AZTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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