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參數(shù)資料
| 型號： | 2SJ506(L) |
| 元件分類： | JFETs |
| 英文描述： | 0.18 ohm, POWER, FET |
| 封裝： | SC-63, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 2SJ506(L) |
2SJ506(L), 2SJ506(S)
5
–2
–1.6
–1.2
–0.8
–0.4
0
–4
–8
–12
–16
–20
200
160
120
80
40
–40
0
40
80
120
160
0
–2,–5 A
Pulse Test
I
= –10 A
D
GS
V
= –10 V
–10 A
GS
V
= –4 V
–2 A
100
10
0.5
2
1
5
20
I = –10 A
D
–2 A
–5 A
50
–0.1
–50
–0.2 –0.5 –1 –2
–5 –10 –20
25
°C
75
°C
V
= –10 V
DS
Pulse Test
Tc = –25
°C
–1
–2
–5
–10
–20
–50 –100
1000
500
50
20
10
200
100
Pulse Test
–10 V
V
= –4 V
GS
–5 A
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Gate to Source Voltage
V
(V)
GS
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Temperature
Case Temperature
Tc
(
°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Forward Transfer Admittance vs.
Drain Current
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ506STL-E | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ506L-E | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ507 | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ508 | 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ509 | 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ506L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506S | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Hight Speed Power Switching |
| 2SJ506S-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) |
| 2SJ506STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
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