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參數(shù)資料
| 型號： | 2SJ501 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關應用 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 238K |
| 代理商： | 2SJ501 |
2SJ501
No.5948–3/4
1ms
SW Time
-
ID
A S O
PD
-
Ta
VDD=
-
10V
VGS=
-
4V
IDP=
-
2A
Operation in this area
is limited by RDS(on).
Ciss,Coss,Crss
-
VDS
VGS
-
Qg
f=1MHz
Ciss
Coss
Crss
VDS=
-
10V
ID=
-
0.5A
td(on)
tr
tf
t(of
10ms
100
μ
s
DCopeaion
ID=
-
0.5A
2
3
5
7
10
100
2
3
5
7
1000
0
-
4
Drain-to-Source Voltage, V
DS
– V
-
2
-
6
-
10
-
8
-
14
-
12
-
18
-
16
-
20
-
1
-
2
-
3
-
4
-
5
-
10
-
9
-
8
-
7
-
6
00
1.0
2.0
3.0
4.0
5.0
2
1.0
3
5
7
10
2
3
5
7
100
2
3
5
7
1000
3
5
7
-
0.1
2
3
2
3
5
7
-
1.0
2
-0.01
3
5
7
-0.1
2
3
5
7
-1.0
2
3
5
-0.01
2
3
5 7-0.1
Drain-to-Source Voltage, V
DS
– V
2
3
5 7-1.0
2
3
2
3
5 7-10
0
20
0.1
0.2
0.3
0.25
0
40
Ambient Temperature, Ta – C
60
80
100
120
140
160
S
Drain Current, I
D
– A
D
D
Ta=25
°
C
Single pulse
C
G
G
A
D
Total Gate Charge, Qg – nC
2
°
C
RDS(on)
-
Ta
VGS=0
ID=-0.3A,VGS=-4V
T-
°
C
7
°
C
IF
-
VSD
ID=-0.05A,VGS=-2.5V
100
200
1000
900
500
600
700
800
400
300
0
-
60
-
40
-
20
0
20
40
60
80
100
120
160
140
2
3
5
7
-
0.001
-
0.01
2
3
5
7
-
0.1
2
3
5
7
-
1.0
2
3
5
7
-
10
0
-
0.2
-
0.4
-
0.6
-
1.0
-
0.8
-
1.2
-
1.4
F
F
S
O
D
Diode Forward Voltage, VSD – V
Ambient Temperature, Ta – C
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|---|---|
| 2SJ502 | Ultrahigh-Speed Switching Applications |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ502 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ503 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC/DC Converter Applications |
| 2SJ503TP | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR |
| 2SJ503TP-FA | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR |
| 2SJ504 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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