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參數(shù)資料
| 型號： | 2SJ499TP-FA |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 31K |
| 代理商： | 2SJ499TP-FA |
2SJ499
No.6589-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--10
A
Drain Current (Pulse)
IDP
PW
≤10ms, duty cycle≤1%
--32
A
Allowable Power Dissipation
PD
1.0
W
Tc=25
°C30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0
--10
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.0
--2.5
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--5A
8
10
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--5A, VGS=--10V
27
45
m
RDS(on)2
ID=--2A, VGS=--4V
48
68
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
1500
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
800
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
370
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
15
ns
Rise Time
tr
See specified Test Circuit
80
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
150
ns
Fall Time
tf
See specified Test Circuit
140
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--10A
45
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--10A
6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--10A
11
nC
Diode Forward Voltage
VSD
IS=--5A, VGS=0
--0.9
--1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
0V
--10V
VIN
P.G
50
ID=--5A
RL=3
VDD=--15V
VOUT
2SJ499
VIN
G
S
D
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