參數(shù)資料
型號(hào): 2SJ492-ZJ
元件分類(lèi): JFETs
英文描述: 20 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263, 3 PIN
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 156K
代理商: 2SJ492-ZJ
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MOS FIELD EFFECT TRANSISTOR
2SJ492
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D11264EJ2V0DS00 (2nd edition)
Date Published April 2007 NS CP(K)
Printed in Japan
1998
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver
circuits.
FEATURES
Low on-state resistance
RDS(on)1 = 100 m
Ω MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 185 m
Ω MAX. (VGS = 4 V, ID = 10 A)
Low input capacitance
Ciss = 1210 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
m20
V
Gate to Source Voltage (VDS = 0 V)
Note1
VGSS(DC)
20, 0
V
Drain Current (DC)
ID(DC)
m20
A
Drain Current (pulse)
Note2
ID(pulse)
m80
A
Total Power Dissipation (TC = 25
°C)
PT1
70
W
Total Power Dissipation (TA = 25
°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note3
IAS
20
A
Single Avalanche Energy
Note3
EAS
40
mJ
Notes 1. f = 20 kHz, Duty Cycle
≤ 10% (+Side)
2. PW
≤ 10
μ s, Duty Cycle ≤ 1 %
3. Starting Tch = 25
°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.79
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ492
TO-220AB (MP-25)
2SJ492-S
TO-262 (MP-25 Fin Cut)
2SJ492-ZJ
TO-220SMD (MP-25ZJ)
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